1) An abrupt Si p-n" junction of cross sectional area 10 cm' is operated at 300K and has thefollowing properties: p-side: N. = 10" cm ', T, = 10 us; n-side: N, » N,. a) Calculate the built-inpotential. Hint: use half the band gap energy for the Fermi level shift for the n-side. b) Calculate thejunction width at a reverse bias of 20 V. c) Calculate the peak electric field at a reverse bias of 20 V.d) Calculate the junction capacitance at a reverse bias of 20 V. e) Calculate the excess electronconcentration on the p-side of the depletion zone An = npo (ext – 1) at a forward bias of 0.7643 V.) Calculate the stored electron charge due to the electron diffusion current on the p side of the junctionat the forward bias of part e (forward current 20 mA). The calculation of part (f) can be done byintegrating the minority charge density on the p-side, Q = -qA S" An e-x/hn dx.

Given Cross-sectional area = 10-4 cm2 Temperature = 300 K Na…

1) An abrupt Si p-n* junction of cross sectional area 10 cm² is operated at 300K and has the following properties: p-side: N, =10'" cm³, Tm = 10 µs; n-side: N, »N,. a) Calculate the built-in potential. Hint: use half the band gap energy for the Fermi level shift for the n-side. b) Calculate the junction width at a reverse bias of 20 V. c) Calculate the peak electric field at a reverse bias of 20 V.

1) An abrupt Si p-n* junction of cross sectional area 10 cm² is operated at 300K and has the following properties: p-side: N, =10'" cm³, Tm = 10 µs; n-side: N, »N,. a) Calculate the built-in potential. Hint: use half the band gap energy for the Fermi level shift for the n-side. b) Calculate the junction width at a reverse bias of 20 V. c) Calculate the peak electric field at a reverse bias of 20 V.