2. A three-phase half-wave controlled converter is constructed using 3 SCR devices. The circuit is supplying an R load with a< 30°. As such, each SCR device would conduct for a) 60° each cycle b) 120° each cycle c) 180° each cycle d) 360° each cycle

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Q.
Choose the correct answer from the following:
2. A three-phase half-wave controlled
converter is constructed using 3 SCR devices.
The circuit is supplying an R load with a<
30°. As such, each SCR device would conduct
for
a) 60° each cycle
b) 120° each cycle
c) 180° each cycle
d) 360° each cycle
4. A thyristor has a maximum allowable
junction temperature of 120°C and the
ambient temperature is 40°C. If thermal
resistance is 1.6° C/W, the maximum
allowable internal power dissipation is:
a. 20 W
b. 50 W
c. 92 W
d. 128 W
6. In reverse blocking state of a thyristor:
a) junction J2 is in reverse bias and J1, J3
is in forward bias.
b) junction J3 is in forward bias and J1, J2
in reverse bias.
c) junction J1, J3 is in reverse bias and J2
is in forward bias.
d) junction J1 and J2 is in forward bias and
J3 is in reverse bias.
Transcribed Image Text:Q. Choose the correct answer from the following: 2. A three-phase half-wave controlled converter is constructed using 3 SCR devices. The circuit is supplying an R load with a< 30°. As such, each SCR device would conduct for a) 60° each cycle b) 120° each cycle c) 180° each cycle d) 360° each cycle 4. A thyristor has a maximum allowable junction temperature of 120°C and the ambient temperature is 40°C. If thermal resistance is 1.6° C/W, the maximum allowable internal power dissipation is: a. 20 W b. 50 W c. 92 W d. 128 W 6. In reverse blocking state of a thyristor: a) junction J2 is in reverse bias and J1, J3 is in forward bias. b) junction J3 is in forward bias and J1, J2 in reverse bias. c) junction J1, J3 is in reverse bias and J2 is in forward bias. d) junction J1 and J2 is in forward bias and J3 is in reverse bias.
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