2. For an ideal silicon p-n abrupt junction with NA = 5 x1016 cm³ and Np = 5 x 1015/cm³, Calculate Vbi at 300K and 600K. Find the depletion layer width and maximum field at zero bias at T=300K. Hints: For Vbi calculation at T=600K, use Eg versus T formula (HW 1). ´ 600 kT(600K)=kT(300K)× 300 ´ 600 N (600K)=N_ (300K)× 300 600 N, (600K)=N, (300K)×| 300

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EP: RRE
(Generalijed) Liiear Phase Filieus
Euan Mart
hin) - hcH-n) Gpes I I
hin) --h(M.n) Types I&Z
2.
Meven; (Ma6)
M + maltipliro
M adders
X(n)
Mesen
be
M odd ; (M=5)
MA multijpleis
M adders
Madld
Modd +
For an ideal silicon p-n abrupt junction with
NA = 5 x1016 cm and Np =
See also cascade raalizationo in b.5.2 of OxS.
2021-10-20 19:02:14
-3
ст
5 x 10'5/cm³,
3
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Calculate Vbi at 300K and 600K.
Find the depletion layer width and maximum field
at zero bias at T=300K.
Hints: For Vbi calculation at T=600K,
use Eg versus T formula (HW 1).
600
kT (600K)= kT(300K)x
300
3/2
600
N(600K)=N (300K)×
300
3/2
600
N, (600K)=N, (300K)×
300
3:36 AM
Type here to search
日
27°C
W
24-Mar-22
Transcribed Image Text:I Homework 6b 03182022.docx.pdf - Adobe Reader File Edit View Window Help 2 / 4 Tools Fill & Sign Comment Оpen 125% IT Sign In • Export PDF • Create PDF EP: RRE (Generalijed) Liiear Phase Filieus Euan Mart hin) - hcH-n) Gpes I I hin) --h(M.n) Types I&Z 2. Meven; (Ma6) M + maltipliro M adders X(n) Mesen be M odd ; (M=5) MA multijpleis M adders Madld Modd + For an ideal silicon p-n abrupt junction with NA = 5 x1016 cm and Np = See also cascade raalizationo in b.5.2 of OxS. 2021-10-20 19:02:14 -3 ст 5 x 10'5/cm³, 3 • Send Files • Store Files Calculate Vbi at 300K and 600K. Find the depletion layer width and maximum field at zero bias at T=300K. Hints: For Vbi calculation at T=600K, use Eg versus T formula (HW 1). 600 kT (600K)= kT(300K)x 300 3/2 600 N(600K)=N (300K)× 300 3/2 600 N, (600K)=N, (300K)× 300 3:36 AM Type here to search 日 27°C W 24-Mar-22
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