70ohma R2-470oh 330onm CURRENT CALCULATED(m CURRENT VOLTAGE (V) VOLTAGE MEASURED CALCULATED MEASURED VOLTAGE % ERROR 0.01076A 0.0075MA 03.5333V 5.0572V 143.13% RI 0.01823A 0.0180mA 08.4680V 8.5681V 101.18% R2 0.01823A 0.0107mA 03.5329V 6.0159V 170.28% R3 Components currents references are given in
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- In a rectifier circuit , DC output voltage and RMS output voltage is 0.3 V & 0.48 V respectively. The form factor of this circuit is ___________________.Do calculation. This is not a simulation problemWhich of the following device is made by semiconductor material and similar to 3 terminal vacuum tube ? a. SCR b. Static Induction Thyristor O c. GTO O d. Static Induction Transistor
- -Fill in the blank(s) with appropriate word(s): 1. The three –phase half - wave converter is not normally used in practical systems, because ___________________.2. The three –phase half - wave converter is provide _______________average output voltage.3. The frequency of output ripple voltage for three –phase half - wave converter is_____________.Repeat example 35 for FWD and firing angle Fa) 60°. 215 l65 D1985 Example 35: A full wave rectifier used 220V, with firing angle 10° ,total resistance load 5 KQ, inductance 2.34 H,and frequency 60HZ, Draw and calculate: (a) VD.c and Ipc (b) VD.C(Max) (c) Vn (d) Vorms-FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
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