9.) (Based on Neaman, Problem 4.58) - Determine the Fermi energy level with respect to the valence band energy for the following conditions. Assume the material is Gallium Arsenide: (a) T = 300 K, Na = 2 × 10¹5 cm-³, N₁ = 0 (b) T = 300 K, Na = 0, N₁ = 10¹6 cm7 -3 (c) T = 300 K, Na Na = 10¹5 cm¯ -3 (d) T = 400 K, Na = 0, Na = 10¹4 cm -3

9.) (Based on Neaman, Problem 4.58) - Determine the Fermi energy level with respect to the valence band energy for the following conditions. Assume the material is Gallium Arsenide: (a) T = 300 K, Na = 2 × 10¹5 cm-³, N₁ = 0 (b) T = 300 K, Na = 0, N₁ = 10¹6 cm7 -3 (c) T = 300 K, Na Na = 10¹5 cm¯ -3 (d) T = 400 K, Na = 0, Na = 10¹4 cm -3

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter11: Molecular Structure

Section: Chapter Questions

Problem 12P

See similar textbooks

Similar questions

Ex 4.11 Consider silicon at T = 300 K. Calculate the thermal-equilibrium electron and hole concentrations for impurity concentrations of (a) Na = 4 X 1016 cm, Na = 8 X 1015 cm-3 and (b) Na = Na = 3 X 1015 cm-3.
Question 2: The Fermi energy level for a particular material at T = 300 K is 5.50 eV. The electrons in this material follow the Fermi-Dirac distribution function. ] Find the probability of an energy level at 5.50 eV being occupied by an b) [ Repeat part (a) if the temperature is increased to T = 600 K. (Assume that EF is a constant.). r a) [ c) electron. ] Calculate the energy level where probability of finding an electron at room temperature is 70%. d) L 1 Calculate the temperature at which there is a 7 percent probability that a state 0.4 eV below the Fermi level will be empty of an electron.
11.1 Give numerical estimates for the Fermi energy of (a) electrons in a typical metal; (b) nucleons in a heavy nucleus; (c) He' atoms in liquid He' (atomic volume particles as free particles. 46.2 Å /atom). Treat all the mentioned %3D
1.25 For N-type semiconductor, doped at the level of ND 1016 cm-3, determine the average distance between two holes if the semiconductor is (a) Si (b) 3C SiC (n; 10-1 cm-3)
(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is n = 1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV i. Clearly Define n . ii. Write an expression for n (T) for Si. [in terms of Eg and T] Calculate n, for Si at OK. Calculate n, for Si at 500K.
Problem 3.17. The Fermi level in a silicon region at thermal equilibrium at room temperature is 0.220 eV above the intrinsic Fermi level E. (a) Calculate the thermal-equilibrium concentration of electrons nº. concentration of hole pº. (b) Calculate the thermal-equilibrium
Calculate the Fermi Energy of a metal (in eV) with an atomic weight of 88.1 g/mol, density of 5.1 g/cm³ and an atomic and a valence of +1. Assume the effective mass to be mo (answer format XXX)
11.2 Show that for the ideal Fermi gas the Helmholtz free energy per particle at low temperatures is given by 57? | kT + %3D - ... 12
3 5. (Kittel 7.5) Liquid He as a fermi gas. The atom "He has spin I= 2 fermion. 3 (a) Calculate as in Table 7.1 the fermi sphere parameters VF, EF and TF for He at absolute zero, viewed as a gas of noninteracting fermions. The density of the liquid is 0.081gcm ³. and is a (b) Calculate the heat capacity at low temperatures T << T and compare with the experimental value C, = 2,89 Nk T as observed for T< 0.1K by A. C. Anderson, W. Reese, and J. C. Wheatley, Phys. Rev. 130, 495 (1963); see also Figure 7.18. Excellent surveys of the properties of liquid He are given by J. Wilks, Properties of liquid and solid helium, Oxford, 1967, and by J. C. Wheatley, "Dilute solutions of 3 He and He at low temperatures," American Journal of Physics, 36, 181-210 (1968). The principles of refrigerators based on He-He are reviewed in Chapter 12 on cryogenics; such refrigerators produce steady temperatures down to 0.01K in continuously acting operation.
In the circuit below, we would like to bias the transistor 5) such that it operates in the active region. (Assuming that we want to have a dc collector current of Ic = 1mA, VBE = 0.7V and B = 100.) +10V +10V R, S Iel> Rc 80k? a) Find the Vihevenin and Rahevenin equivalent for the shaded region of the circuit. B= 100 3 RE 20k b) Find the value of Rg which places the transistor in the active region with I, = 1mA c) Find the value of R. which are also suitable for keeping the transistor in the active region with Ie = 1mA.
Question 2: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 5*10^15/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Correct Answer: 1.1
Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.