A 0.5 tm-thick InGaAs sample is measured using the Hall effect. A current of 0.2 mA is passed through the sample in a magnetic field of 0.3 T. and a Hall voltage 0.4 mV is detected. 1)What is the electron concentration in the sample, given the charge of an electron is 1.6 x - 10'9 C? 2)Explain why it would be difficult to measure a sample of copper of the same thickness (with an electron concentration of 8.5 x 028 m-3) using the same app
A 0.5 tm-thick InGaAs sample is measured using the Hall effect. A current of 0.2 mA is passed through the sample in a magnetic field of 0.3 T. and a Hall voltage 0.4 mV is detected.
1)What is the electron concentration in the sample, given the charge of an electron is 1.6 x - 10'9 C?
2)Explain why it would be difficult to measure a sample of copper of the same thickness (with an electron concentration of 8.5 x 028 m-3) using the same apparatus. How might the experiment be modified?
3)The InGaAs sample is then excited with light, such that along its length of 2 mm there is a change in electron concentration of 3 x 1018 cin-3. Assuming that there is a linear variation in electron concentration with distance, and the diffusion constant of electrons in InGaAs is' 250 CM2S-1, calculate the current density.
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