(b) A device engineer fabricates a sensor by depositing an a-Si:H film on a glass substrate and then depositing an Al electrode onto the a-Si:H film. The device has the structure glass/a-Si:H/metal. The glass substrate is 10 mm thick. The a-Si: is 5 μm thick and the Al electrode is 0.2 µm thick. The expansion coefficients of glass, a-Si:H and Al are about 7×106 K-¹, 4×106 K-¹, 23×106 K-¹ respectively. Elastic moduli are Eglass = 70 GPa, Ea-Si:H= 100 GPa, EA1 = 70 GPa. Calculate the stress in each layer if the temperature drops from 25 °C to -50 °C.

Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
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(b)A device engineer fabricates a sensor by depositing an a-Si:H film on a glass substrate and then depositing
an Al electrode onto the a-Si:H film. The device has the structure glass/a-Si:H/metal. The glass substrate is 10
mm thick. The a-Si: is 5 µm thick and the Al electrode is 0.2 µm thick. The expansion coefficients of glass,
a-Si:H and Al are about 7x106 K-!, 4×10-6 K-', 23×10-6K-l respectively. Elastic moduli are Eglass = 70 GPa,
Ea Si:H = 100 GPa, EAI = 70 GPa. Calculate the stress in each layer if the temperature drops from 25 °C to –50
°C.
Transcribed Image Text:(b)A device engineer fabricates a sensor by depositing an a-Si:H film on a glass substrate and then depositing an Al electrode onto the a-Si:H film. The device has the structure glass/a-Si:H/metal. The glass substrate is 10 mm thick. The a-Si: is 5 µm thick and the Al electrode is 0.2 µm thick. The expansion coefficients of glass, a-Si:H and Al are about 7x106 K-!, 4×10-6 K-', 23×10-6K-l respectively. Elastic moduli are Eglass = 70 GPa, Ea Si:H = 100 GPa, EAI = 70 GPa. Calculate the stress in each layer if the temperature drops from 25 °C to –50 °C.
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