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Consider a Silicon photodiode, which is designed for operation at 850 nm. If possible choices are given for antireflection coatings, such as, SiO2 with the refr index of 1.5, GeO2 with the index profile of 1.65 and GaAs with the index pro 3.6, then which would you choose and why? Determine the thickness c antireflection coating, considering the refractive index of Si is 3.5.

Consider a Silicon photodiode, which is designed for operation at 850 nm. If possible choices are given for antireflection coatings, such as, SiO2 with the refr index of 1.5, GeO2 with the index profile of 1.65 and GaAs with the index pro 3.6, then which would you choose and why? Determine the thickness c antireflection coating, considering the refractive index of Si is 3.5.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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4. Consider a Silicon photodiode, which is designed for operation at 850 nm. If three possible choices are given for antireflection coatings, such as, SiO2 with the refractive index of 1.5, GeO2 with the index profile of 1.65 and GaAs with the index profile of 3.6, then which would you choose and why? Determine the thickness of the antireflection coating, considering the refractive index of Si is 3.5.
Transcribed Image Text:4. Consider a Silicon photodiode, which is designed for operation at 850 nm. If three possible choices are given for antireflection coatings, such as, SiO2 with the refractive index of 1.5, GeO2 with the index profile of 1.65 and GaAs with the index profile of 3.6, then which would you choose and why? Determine the thickness of the antireflection coating, considering the refractive index of Si is 3.5.
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