Consider an n-channel MOSFET with the following parameters:-Gate width, W =10µm,Gate length, L=1.5um, andOxide capacitance C =10F/ cm?.In the linear region for a fixed Vos = 0.1V, the drain current, Ips, isfound to be 40uA for Ves = 1.5V and 80µA for Ves = 2.5V respectively.%3DCalculate the threshold voltage V, and mobility 4, of this MOSFET.

By drain current equation , we will find out threshold voltage and mobility .

Consider an n-channel MOSFET with the following parameters:- Gate width, W =10um, Gate length, L=1.5µm, and %3D Oxide capacitance C =10-F/ cm². In the linear region for a fixed Vps = 0.1, the drain current, Ips, is found to be 40uA for Ves = 1.5V and 80µA for Ves = 2.5V respectively. Calculate the threshold voltage V, and mobility 4, of this MOSFET.

Consider an n-channel MOSFET with the following parameters:- Gate width, W =10um, Gate length, L=1.5µm, and %3D Oxide capacitance C =10-F/ cm². In the linear region for a fixed Vps = 0.1, the drain current, Ips, is found to be 40uA for Ves = 1.5V and 80µA for Ves = 2.5V respectively. Calculate the threshold voltage V, and mobility 4, of this MOSFET.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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