f the potential barrier to carrier diffusion is increased (in a diode) by the applied voltage, the type of bias used is Blank 1 bias. Blank 1 Add your answer
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- How many valence electrons are generally contained in materials used for insulators?Q1) a)Explain how doping a pure silicon crystal with donor impurity atoms makes more charge carriers available for conduction.b)Does the above doping result in a p-type or n-type semiconductor? Explain your answer. c) When the diode is forward biased:i) What happens to the barrier potential?ii) What happens to the depletion region?iii) Indicate on your diagram the directions in which the holes and electrons movePlease make a concept map of the covalent link theme for semiconductors with the following subtopics, you can add tables, graphs, images, or things you think are relevant 1.5 Driving process 1.5.0 Introduction 1.5.1 Mobility 1.5.2 Relationships between carrier equilibrium concentrations 1.5.3 Detailed balance principle 1.5.4 Carrier equilibrium concentrations in homogeneous semiconductors 1.5.5 Conductivity 1.5.6 Hall Effect
- An addition of trivalent impurity to a semiconductor creates many a. Holes b. Free electrons c. Valence electrons d. Bound electrons A hole in a semiconductor is defined as a. A free electron b. The incomplete part of an electron pair bond C. A free proton d. A free neutron As the doping to a pure semiconductor increase, the bulk resistance of the semiconductor a. Remains the same b. Increases C. Decreases d. None of the aboveCorrect the mistake for the underlined phrase in each of the following 1. With forward bias to a p-n junction , the width of depletion layer remains the same 2. A p-type semiconductor material is doped with donor impurities . 3. When a pentavalent impurity is added to a pure semiconductor, it becomes an insulator 4. Addition of pentavalent impurity to a semiconductor creates many Bound electrons 5. A two-diode rectifier will not operate without a capacitive filterThe diodes in the circuit are Silicon with aforward voltage of 0.7 V. Fill up the tableshowing the state, voltage and current ofeach of the diodes. Show how youvalidated the state of each diode. Followthe reference shown in determiningwhether the diode voltages and currentsare positive or negative.
- 4.) In which mode will a diode generally not conduct electricity? a. Bidirectional Biased b. None of these c. Forward Biased d. Reversed Biased 5.) Consider the following schematic symbol of a semiconductor device: Which side is the Cathode? (Picture inserted down below) a. Side A b. Both side A and B c. Side B d. Neither side A or B 8.) Integrated circuits can be broken down into three basic categories. Which category does an operational amplifier (or op-amp) fall into? a. Analog b. None of these c. A combination of analog and digital d. DigitalDetermine the following: a. This is the type of semiconductor produced due to doping. b.The type of doping that is achieved by replacing a Si atom with an atom with fewer electrons in the outer shell c. Semiconductors that contain both donor and acceptor atoms are calledIn the circuit a current of no more tha 20 mA may flow for a maximum instataneous voltage of 20 v.In the conducting state direction the voltage drop across each diode is at least 1.5 v. How large must the protective resistor be?calculate using ohms law.
- How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductorConsider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?Name the majority carrier in an n-type and p-type extrinsic semiconductor. Briefly explain the behavior of the carriers during the formation of the P-N junction and their relation to the depletion region appears in the junction. (c)