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- The Madelung constant for the NaCl structure may be found by summing an infinite alternating series of terms giving the electrostatic potential energy between an Na+ ion and its 6 nearest Cl neighbors, its 12 next-nearest N+ neighbors, and so on (see Fig. 12.1a). (a) From this expression, show that the first three terms of the infinite series for the Madelung constant for the NaCl structure yield = 2.13. (b) Does this infinite series converge rapidly? Calculate the fourth term as a check.a) Which of these transistor structures, n-channel JFET, E-MOSFET and D- MOSFET can be operated in enhancement model and why is that possible?Determine Icsan for the transistor shown in the figure below. What is the value of Is necessary to produce saturation? What minimum value of VIn is necessary for saturation? Assume VCE( = 0 V. %3D +5 V 10 k R VINO Boc= 150 1.0 MA
- a) State two ways in which a pn junction can be formed. b) Define the metallurgical junction. c) What is a step junction? d) Explain what is meant by a diode or ou junction being: Zero biased. Forward biased. Reverse biased. (ii) (iii) e) Mention two functions of the built-in potential barrier.What is the advantage of field-effect transistor (FET) according to bipolar JunctionTransistor (BJT) ? Please explain briefly with a few sentences.Using PNP transistor, draw the common base,common emitter and common collector .
- Given below are two statements: Statement I: PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal. Statement II: In the study of transistor, the amplification factor β indicates ratio of the collector current to the base current. In the light of the above statements, choose the correct answer from the options given below. a. Statement I is false but Statement II is true. b. Both Statement I and Statement II are true. c. Statement I is true but Statement II is false. d. Both Statement I and Statement II are false.With the aid of cnergy diagrams, deNcribe the formation of an n-lype semiconductor. (c) Describe the carrier transport which takes place when a pn junction is formed by joining n and p type scmiconductors. (d)Consider an approximate model of the epitaxial resistivity in a silicon power transistor:A pyramid structure with a square base has a resistor in every edge of the structure.The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram.(b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs.(c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
- please very soon Satisfy the given table using improves diode transistor logicExplain why size-dependent nanoscale properties are not realized currently in semiconductor processors despite the size of the processor elements getting smaller and smaller.- Using the equation below, which I gave you in class to calculate the donor level (i.e. the binding energy of a n-type impurity in semiconductor), E₂- E = m 8E2h2 calculate the donor binding energy for a semiconductor with dielectric constant = 16 and electron effective mass = 0.8 mo. Take = && where & is the permittivity of free space and & is the dielectric constant of the material.