Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.

Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

See similar textbooks

Similar questions

Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?
How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductor
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
When a pentavalent impurity is added to a pure semiconductor, it becomes ......... 1. An insulator 2. An intrinsic semiconductor 3. p-type semiconductor 4. n-type semiconductor
Draw the characteristics of Ideal and practical diodes. A semiconductor has electron and hole mobilities as Hn = 7500 cm³ /V. sec, Hp = n = 3.6 x 1012 cm-3. Find (i) The hole concentration when conductivity is minimum. (ii) The minimum conductivity. 300 cm /V.sec and
Calculate the voltage and current of the diode in the figure for each of the diode's models. In each case, determine the voltage across the resistor. Additionally, in each case, determine the diode's power. Assume that Rb is ten ohms.
Suppose a semiconductor has ND=1016/cm3and ni =1010/cm3. What are the equilibrium electron and hole concentrations?
If the forward voltage in a semiconductor diode changes from 0.7 V to 0.8 V, then forward current changes from 10 mA to 20 mA. The forward a.c. resistance of the diode is ?
a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1
Consider four of semiconductor samples: solid A is orange, solid B is black, solid C is white, and solid D is yellow. Given their colors, rank these semiconductors in order of increasing band gap. A. B < A < D < c B. B < D < A < C C. C < D < A < B D. C < A < D < B
Choose the doping material that will cause silicon to become a p-type semiconductor. A. Ge B. As C. Te D. B