In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV. What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25 deg C?

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In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV.
What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25 deg C?
Your answer must be to 2 significant figures or will be marked wrong.
Ne
Transcribed Image Text:Time left In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV. What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25 deg C? Your answer must be to 2 significant figures or will be marked wrong. Ne
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