I need the answer quickly Q5)Design the BJT amplifier circuit shown below to have a (A, = -5). (Zn 2.5 kn).(Z, = 2 ka), (Z, = 1.8 kn).Assume that the transistor is silicon with, (B = 80) (r = /h%3D). (h = 1.2 kn)%3D= 00and (R, = 5 kn).Vect + 20VRLER:R

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Answered: Q5) Design the BJT amplifier circuit…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Vsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %
5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.
Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.
MOSFET Amplifier: 1. Determine the drain-to-source voltage (VDs) if VDD = +1sV and RD = 6202. The MOSFET data sheet gives and Ipss = 12 mA. (Ans: Vps=10.6 V) %3D
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In the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a co
Compare hybrid model circuit and re model circuits. Which circuit are you going to recommend in solving AC signal amplifier stage. Defend your answer
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pF
2. Provide a practical example where E-MOSFET and D-MOSFET are used together, explain how how it works.
draw the following systems: 1- AM generation -Square law product. 2- PM generation- frequency modulator.
Draw the equivalent Small signal Model and write an equation of Ro .
1. For a certain D-MOSFET, IDSS = 18 mA, and VGS = +10V. Vp =4V. a) Determine ID at VGS =+ 3V. b) Determine ID at VGS = -3V. %3D

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Q5) Design the BJT amplifier circuit shown below to have a (A, = -5). (Zn = 2.5 (2, = 2 ki), (Z, = 1.8 kn). Assume that the transistor is silicon with, (B = 80) (r = /h and (R, = 5 kn). %3D ). (h, = 1.2 %3D = 00 Vect + 20V R, RL