Q6. If etch rates are 100nm/min for silicon and 10nm/min for silicon dioxide mask, the etch selectivity should be... O 0.01 O 0.1 O 1 O 10

Principles of Instrumental Analysis
7th Edition
ISBN:9781305577213
Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Chapter23: Potentiometry
Section: Chapter Questions
Problem 23.12QAP: What arc the advantages of microfabricated ISEs? Describe typical applications of this type of...
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Q6. If etch rates are 100nm/min
for silicon and 10nm/min for
silicon dioxide mask, the etch
selectivity should be...
O 0.01
O 0.1
O 1
O 10
Transcribed Image Text:Q6. If etch rates are 100nm/min for silicon and 10nm/min for silicon dioxide mask, the etch selectivity should be... O 0.01 O 0.1 O 1 O 10
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