Hello, can someone help explain this to me? TIA..Calculate Vbi in a silicon pn junction for Nd = 1014 cm-3and Na = 1016 at 310K. Semiconductor ConstantsEg (eV)1.1B (cm³ K³2)В (сmMaterial-3Silicon (Si)Gallium Arsenide (GaAs)Germanium (Ge)5.23 х 10152.10 x 10141.40.661.66 x 1015Boltzmann's constant – 86 x 10-6 eV/KThermal Voltage at room temperature (300 K) – VT = 0.026 V

Given:For Silicon p-n junction,at 300 K,Nd=1014 cm-3Na=1016 cm-3 Energy gap for Silicon, Eg=1.1…

Semiconductor Constants B (cm³ K³2) 5.23 х 1015 Eg (eV) Material Silicon (Si) Gallium Arsenide (GaAs) Germanium (Ge) 1.1 2.10 x 1014 1.66 x 1015 1.4 0.66 Boltzmann's constant – 86 x 10-6 eV/K Thermal Voltage at room temperature (300 K) – VT = 0.026 V -

Semiconductor Constants B (cm³ K³2) 5.23 х 1015 Eg (eV) Material Silicon (Si) Gallium Arsenide (GaAs) Germanium (Ge) 1.1 2.10 x 1014 1.66 x 1015 1.4 0.66 Boltzmann's constant – 86 x 10-6 eV/K Thermal Voltage at room temperature (300 K) – VT = 0.026 V -

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Question

Hello, can someone help explain this to me? TIA..

Calculate Vbi in a silicon pn junction for Nd = 1014 cm-3
and Na = 1016 at 310K.

Semiconductor Constants
Eg (eV)
1.1
B (cm³ K³2)
В (сm
Material
-3
Silicon (Si)
Gallium Arsenide (GaAs)
Germanium (Ge)
5.23 х 1015
2.10 x 1014
1.4
0.66
1.66 x 1015
Boltzmann's constant – 86 x 10-6 eV/K
Thermal Voltage at room temperature (300 K) – VT = 0.026 V

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