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The complex dielectric constant of the semicon- ductor cadmium telluride is given by er = 8.92 + i 2.29 at 500 nm. Calculate for CdTe at this wave- length: the phase velocity of light, the absorption coefficient and the reflectivity.

The complex dielectric constant of the semicon- ductor cadmium telluride is given by er = 8.92 + i 2.29 at 500 nm. Calculate for CdTe at this wave- length: the phase velocity of light, the absorption coefficient and the reflectivity.

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(1.3) The complex dielectric constant of the semicon- 8.92 + ductor cadmium telluride is given by er i 2.29 at 500 nm. Calculate for CdTe at this wave- length: the phase velocity of light, the absorption coefficient and the reflectivity. (1.4) The detectors used in optical fibre networks op- erating at 850 nm are usually made from silicon, which has an absorption coefficient of 1.3×105 m¯¹ at this wavelength. The detectors have coatings on the front surface that makes the reflectivity at the design wavelength negligibly small. Calculate the thickness of the active region of a photodiode de- signed to absorb 90% of the light.
Transcribed Image Text:(1.3) The complex dielectric constant of the semicon- 8.92 + ductor cadmium telluride is given by er i 2.29 at 500 nm. Calculate for CdTe at this wave- length: the phase velocity of light, the absorption coefficient and the reflectivity. (1.4) The detectors used in optical fibre networks op- erating at 850 nm are usually made from silicon, which has an absorption coefficient of 1.3×105 m¯¹ at this wavelength. The detectors have coatings on the front surface that makes the reflectivity at the design wavelength negligibly small. Calculate the thickness of the active region of a photodiode de- signed to absorb 90% of the light.
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