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- The datasheet shown below for a group of commercial Zener diodes, according to the datasheet the typical voltage and leakage current of the Zener diode with model number 1N4732A are: * Tolerance- S% FAIRCHILD SEMICONDUCTOR Datasheet 1N4728A - 1N4758A Zener Diodes D0041 Glass case Electrical Characteristics 1,-25°C untess otherwise noted Vz (V) @ Iz (Note 1) Max. Zener Impedance Leakage Current Test Current Device Zz@lz ZzK @ IZK (mA) IR (HA) VR (V) Min. Тур. Мах. Iz (mA) (오) Izk (2) 3.315 3.42 1N4728A 3.3 3.465 76 10 400 1 100 1 1N4729A 3.6 3,78 69 10 400 100 1N4730A 3.705 4.085 3.9 4.095 64 9 400 50 1N4731A 4.3 4.515 58 400 10 1N4732A 4.465 4.7 4.935 53 500 1 10 1 1N4733A 4.845 5.1 5.355 49 550 10 1 1N4734A 5.32 5.6 5.88 45 600 10 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 1N4736A 6,46 6.8 7.14 37 3.5 700 1 10 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 b. 1V and 10uA O c. 4.7V and 10uA a. 4.465V and 10UA O d. 4.7V and 53mAFor the semiconductor diode the "on" state will support a current in the direction of the in the symbol. Your answer The region of uncovered positive and negative ions is called the due to the diminution of free carriers in the region. (Two Words) Your answer What is the net flow of charge in the absence of an applied bias across a semiconductor diode? Your answer(a) Diode is made from n-type and p-type extrinsic semiconductors. Figure Q1(a) shows an example of electrical circuit using diodes. (i) Explain the different in forming n-type and p-type extrinsic semiconductor. (ii) Depletion region is a region between n-region and p-region in diode structure. By using your own word, explain what caused the depletion region to become narrow. (iii) Calculate the value of V, and I, for the circuit in Figure Q1(a). Ge 15V O Si Si 6.6kN Figure Q1(a) : Electric circuit using diode (b) Figure Q1(b) shows a bridge rectifier circuit using germanium diodes. (i) State the rectifier circuit type. (ii) Draw the output waveform, vo for the circuit.
- Please make a concept map of the covalent link theme for semiconductors with the following subtopics, you can add tables, graphs, images, or things you think are relevant 1.5 Driving process 1.5.0 Introduction 1.5.1 Mobility 1.5.2 Relationships between carrier equilibrium concentrations 1.5.3 Detailed balance principle 1.5.4 Carrier equilibrium concentrations in homogeneous semiconductors 1.5.5 Conductivity 1.5.6 Hall EffectAt 305 °K temperature, the voltage equivalent of temperature of diode is ______________________V. Assume the Boltzmann's constant is 8.62*10-5 eV / K Answer:An AC voltage controller with common cathode has O a. two diodes to be conducted at a time b. one SRC to be controller at a time O c. two SRC to be controller at a time O d. four diodes to be conducted at a time
- The density of doping of zener diode is less than normal diode. True FalsePlease solving them all. Determine the total current, diodes' voltage and current using a. second approximation b. third approximation All diodes are silicon with bulk resistance of 1.2k ohms. Round off answers in five decimal places.Q14. Determine the current I in the circuit shown below. Assume the diodes to be of silicon and forward resistance of diodes to be zero. D1 2 k2 R E = 24 V Ez = 4 V= D2