4. Evaluate the strain hardening increment to the yield strength of Li [BCC, G (shear modulus) = 32 GPa, a (lattice constant) = 3 Å] alloy with a microstructure due to a dislocation density of 3x1013 m-2. Make appropriate assumptions, if any.
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4. Evaluate the strain hardening increment to the yield strength of Li [BCC, G (shear modulus) = 32 GPa, a (lattice constant) = 3 Å] alloy with a microstructure due to a dislocation density of 3x1013 m-2. Make appropriate assumptions, if any.
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- a) Calculate the basicity and acidity of a slag composed of 41 wt% SiO2; 13 wt% FeO; 39 wt% CaO, 7 wt% MgO. (Molecular Weights; Ca: 40.08, O: 16.0, Fe: 55.85, Si: 28.08, Mg: 24.31) b) Describe the formation stage of white matte during the pyrometallurgical production of copper. Calculate the theoretical amount of Cu in the white matte. (Molecular Weights; O: 16, Fe: 55.85, Si: 28.08, Cu: 63.5, S: 32.06).2. What is the distinction between matrix and dispersed phases in a composite material?A student is running a stress-strain experiment on an elastomeric band (p = 0.94 g.cm3) at 30 °C. They obtained the following results: Strain 0.4 0.7 1.2 2.5 Stress (Pa) 360000 830000 1200000 2500000 What is the average molecular weight of chain length between crosslinks of this band?
- (a) A silicon sample maintained at T = 300 K is uniformly doped with Nd = 1016cm-3 donors. Calculate the resistivity of the sample.At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?a) Draw rock salt unit cell of NaCl and give the coordinates (u,v,w) describing the positions of all the atoms in such a unit cell. b) Calculate the structure factor |F_hkl|^ 2 for such a unit cell for x-ray scattering from a given set of crystallographic planes (hkl). c) Which reflection peaks have the lowest and highest intensities and why
- Using Cu-Ka radiation (I = 154 pm), The Bragg angle is 22.2 for the (110) type planes for a BCC crystal of lattice parameter 288 pm and n = 1. Are these reflections allowed?Calculate the acidity and basicity degrees for the slag composed of 56 % SiO2; 18 % FeO; 5 % Cao, 21 % Mgo (Molecular Weights; Ca: 40.08, O: 16, Fe: 55.85, Si: 28.08, Mg: 24.3). Examine this result in accordance with viscosity and melting point of that kind of slags. Calculate the amount of Cao that must be added to the slag to increase the basicity value to 1.5 for this slag.(b) A sample of titanium monoxide has a unit cell dimension of 4.182 A, a Ti/O ratio of 1.005 and an experimental density of 5.764 x10° kg m. Determine whether the defect in this sample is due to Ti cation excess or oxide vacancies.
- 2. (d) Describe three of the functions of the matrix in fibrereinforced composites. (e) With the aid of sketches compare and contrast the fatigue fracture appearance between an alloy that failed at a low fatigue load and one that failed at a high fatigue load. (f) Propose and briefly describe one non-destructive method that can be used to detect small cracks on the surface of a metallic alloy .3. Find lattice constant and atomic radius of Silver from the X-Ray spectra for Silver nanoparticles given below and compare with appendix (wavelength of incident X-Ray is 0.154 nm ) 40 (111) 35 30 25 20 (200) 15 (311) (220) 10 |(222) 5 10 30 2 Theta 50 70 90 Fig. 3. X-ray diffraction patterns of silver nanoparticles embedded ultra-thin film solar cell.Sketch within a cubic unit cell the given direction and plane. The origin point for the index of direction is 0, 0, 0. [112] and (oīī) -
