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- The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.Using the mathematical expression for the conductivity of a material, explain how it varies with temperature for (i) semiconductors, (ii) good conductors.
- . Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…(a). (b). Describe the cut-off mode of a transistor. An amplifier circuit with a bipolar junction transistor (BJT) is shown in the Figure 4 Vin C1 47 μF (i). (ii). (iii). (iv). ww ww R1 10 ΚΩ R2 4.7 ΚΩ ww R3 100 Ω R4 1 ΚΩ Figure 4 C3 47 μF C2 47 μF Determine the BJT configuration, Vout Describe the BJT input and output terminals, State two of the BJT output characteristics, V 15 V Calculate the current amplification factor of the BJT, if emitter current, IE, base current, B and collector current, Ic is 4.080 mA, 35.41 μA and 4.045 mA respectively.
- (e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ 9.46 x 10⁹ cm-³ 0 m-3 2.40 x 1019 cm-3 B. C. D.a) If the electron concentration increase along the x-axis of a conductor as shown in equation below: n=3-1030x2+2- 102x+1026 And D=1.2 x 10-4 m/s. Find the diffusion current at x =Smm? b) Find the minimum electron concentration nmin in semiconductor?An n-type semiconductor has an intrinsic concentration of 1.45 x 10^16/m^3. Given that the mobilities of electrons and holes are 0.4m^2/V-s and 0/2m^2/V-s, respectively, determine the conductivity of the semiconductor (A) before, and (B) after the addition of 5 x 10^23 Sb Atoms/m^3
- d) Design the channel length of a transistor so that 7 out of every 8 electrons reach the drain contact. Assume the material exhibits a diffusion coefficient of 35 cm²/s and average velocity of 105 m/s.what would happen if we replaced the PVC rod with a semiconductor material? What mechanisms could we employ to inject energy into the bound charges in the semiconductor to force it to act like more of a conductor?Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less mainly due to the screening of the ionic charge by the dielectric behavior of the medium. For phosphorus in silicon, the ionization energy is 0.044 e V. Suppose that there are 1017 P atoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.