An unknown semiconductor has a band gap, Eg =1.1 eV and NC = NV where NC and NV are effective density of states in the conduction and valence band respectively. It is doped with 1015 cm-3 donors, where the donor level is 0.2 eV below conduction band minimum EC. Given that EF is 0.25 eV below EC, calculate intrinsic carrier density (ni), and the concentration of electrons and holes in the semiconductor at 300 K

An unknown semiconductor has a band gap, Eg =1.1 eV and NC = NV where NC and NV are effective density of states in the conduction and valence band respectively. It is doped with 1015 cm-3 donors, where the donor level is 0.2 eV below conduction band minimum EC. Given that EF is 0.25 eV below EC, calculate intrinsic carrier density (ni), and the concentration of electrons and holes in the semiconductor at 300 K

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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