(b) (i) Explain how doping may be used to create extrinsic n-type andp-type semiconductors.(ii) Describe the structure and operation of a p-n junction as a dioderectifier.

i)Let's delve deeper into each type of doping:1. n-type Semiconductor:In an n-type semiconductor, a…

Answered: (b) (i) Explain how doping may be used…

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 3Q

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The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
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Doping is necessary in order to enhance the conduction ability of a semiconductor. Support this statement by giving suitable arguments?
An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87
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A p-n junction made of Silicon has an intrinsic carrier concentration of 1.1 × 10¹⁰ cm−³, a donor concentration of 1.5 × 10¹7 cm-³ and an acceptor concentration of 0.6 × 10¹6 cm−³ at room temperature (300 K). (i) (ii) (iii) Calculate the built-in potential established in the p-n junction. Give your answer to 2 d.p. Determine the voltage drop across the depletion layer on the n- side? Hint: Calculate this by finding the change in Fermi level (relative to the intrinsic level) on the n-side. What are the two mechanisms responsible for the breakdown of a p-n junction when reverse biased?
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A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.
In an unbiased p-n junction, holes diffuse from the p-region to n-region because(a) free electrons in the n-region attract them.(b) they move across the junction by the potential difference.(c) hole concentration in p-region is more as compared to n-region.(d) All the above

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(b) (i) Explain how doping may be used to create extrinsic n-type and p-type semiconductors. (ii) Describe the structure and operation of a p-n junction as a diode rectifier.