Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.2, Problem 3.2E
To determine
The electron and hole concentration at
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3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the
questions by considering the diodes as ideal and practical silicon ones respectively.
Vs
Vs
Vs
R2
R2
R2
Vout
P
D
R1
R1
R3
R1
(a) Vout = ?
(b) Vp = ?
(c) Vp = ?
Note: Vp means the voltage at point p.
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3Q1:For the circuit on the right,a. Graph the output voltage v0 against the input voltage v1.Assume ideal diodes.b. Describe the behaviour of D1 in terms ofsemiconductor behaviour.Q2: For the circuit shown in Figure 1:1. Describe the behaviour of a p-n junction in terms of semiconductor behaviour.2. Describe and evaluate the circuit. Assume the values for the parameters in the circuit.You should critically evaluate the performance of the circuit and suggest potential applications.Q3: For the circuit shown in Figure 2, find the following:1. Describe the function of the circuit in terms of simple of semiconductor behavior.2. Evaluate the output voltage vo, assuming vs is 10 Sine (200t) mV, RE1 =100 Ω,and RE2 =900 Ω. The bypass capacitor (CE) is in parallel with RE2.3. Simulate the circuit and verify your answers; you should show the input voltage.and output voltage on the same graph.4. You should explain the characteristics of the amplifier.
(i) In an intrinsic semiconductor, the electrical conductivity takes into account the contribution of electron and hole current. (ii) Furthermore, every electron that is promoted across the band gap leaves behind a hole in the valence band, that is, n = p = ni. The above statements are: A. True B. False D. No idea C. Neither True nor False E. Cannot be determined Other:
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Q3. G/ When a silicon material is doped with Arsenic (As) that has 5 valance electrons, the doped material is called: * P-type O N-type Аcсeptor Donor Q3. H/ At any finite temperature, the energy level at which the probability of finding electrons falls to half is called: Your answerarrow_forward(a) Plot the load line and find the Q-point for the diode circuit shown in P3.53 if V = 5 V and R =10kΩ. Use the i-v characteristic as shown in P3.39. (b) Repeat for V =−6V and R =3kΩ. (c) Repeat for V =−3 V and R = 3kΩ.arrow_forwardQ3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of N. and N, are 2.8×1025/m³ and 1.04×10²5/m³, respectively. (Ans: (a) 7.68×1010/m³, (b) 2.38×1018/m³)arrow_forward
- Q3.C/ The breakdown voltage can be decreased by increasing the: Q3. D/ The junction is in thermal equilibrium when the * Q3. E/ The only parameter that affects the conduction in semiconductors is temperature * O True O False O Conduction is independent of temperature O Other:arrow_forwardQuestion 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionarrow_forwardWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to add impurity increase the resistivity apply heat None of the themarrow_forward
- P3. Determine which of the diodes conduct in the circuit shown below. Each diode has an offset voltage (also referred to as forward bias voltage) of 0.6V when conducting. [Hint: If both D₁ and D2 were forward biased and conducting (hypothesis), it can be determined that, with diodes represented by the offset model, the potential at A is VA = 3.7V. Then go back to check the hypothesis to see if it holds] 122 A D₂ DI WWWKWW 5.4 V 1892 5V( F "Iarrow_forwardQ3. F/ When a large voltage is applied, the resistance of the space charge region becomes: * Larger Smaller Resistance equal to the applied voltage Q3. G/ When a silicon material is doped with Arsenic (As) that has 5 valance electrons, the doped material is called: * O P-type O N-type Acceptor O Donor Q3. H/ At any finite temperature, the energy level at which the probability of finding electrons falls to half is called: Q4/ Have you answered all the questions? O Yes O Noarrow_forwardWhich of the following options is FALSE about the semiconductor diodes? Lütfen birini seçin: O A. Diodes are made of semiconductor materials with additional dopping to enhance their conducting properties. O B. They are non-linear devices; hence, if one wants to draw their current-voltage graph, they will end up with an exponential plot. O C. The type of the semiconductor material matters in the characteristics of the device; such that the forward-bias voltage (Vp.) is different for Ge and Si based diodes. O D. They ideally let the electric current flow in the direction from cathode terminal to anode terminal, while completely blocking it in the direction from anode to cathode.arrow_forward
- A silicon diode described by the Shockley equation has n = 2 and operates at 150° C with a current of 1 mA and voltage of 0.25 V. Part A Determine the current after the voltage is increased to 0.32 V. Express your answer to three significant figures and include the appropriate units. HA ? ip = Value Unitsarrow_forwardWhen a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.arrow_forwardThe energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e, the Fermi energy level Ef is constant) is shown in the figure. The valence band E, is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is A. p-type Ef Ev z = 0 z = L If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar isarrow_forward
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Diodes Explained - The basics how diodes work working principle pn junction; Author: The Engineering Mindset;https://www.youtube.com/watch?v=Fwj_d3uO5g8;License: Standard Youtube License