Essential University Physics: Volume 2 (3rd Edition)
Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
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Chapter 37, Problem 26E
To determine

The shortest wavelength of light produced and the material which produces this light.

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a) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)
A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As atoms in this crystal will be: O 3.641e24 /cm^3 2.048e30 /cm^3 O 1.821e24 /cm^3 O 3.550e16 /cm^3 O 1.593e24 /cm^3
Figure 1 shows the absorption coefficient for several direct and indirect bandgap semiconductors. Analyses these figure in term of indirect bandgap materials. ABSORPTION COEFFICIENT (cm²) 106 105. 104 103. 10² 10 0.2 3 GaP 2 Si 0.6 PHOTON ENERGY (CV) 1.5 GaAs InP Figure 1 In0.53 Ga0.47As 1.4 WAVELENGTH (μm) 0.7 1.8

Chapter 37 Solutions

Essential University Physics: Volume 2 (3rd Edition)

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