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Calculate the linear density (in units of atoms/nm) along the [101][101] direction in copper.
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- Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
- Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?
- Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:A sample of copper has a mass of 10.68 g when measured in air. It has a mass of 9.47 g when measured in water. Answer these three questions: How many atoms are in the sample? What is the simple volume of the space including and surrounding each atom? Assume the atoms are evenly distributed throughout the sample. That is no FCC, BCC, or HCP crystal structure. What is the diameter of each atom?At what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?
- 2) In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10[nm] by 2O[nm]. The early microchips in the 1970's had rectangular transistors that each measured approximátely 20[um] by 40[µm]. How manv of the new 2021 transistors could fit inside the same area of a single 1970 transistor? A) 400 B) 4000 C) 40,000 D) 400,000 É 4,000,000The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes.b)Super conductor aluminum has critical temperature of 7.26K at zero magnetic fields and a critical field of 5×10^5 A/m at zero Kelvin. Find the critical magnetic field at 3K……