Please answer Q2 and Q3 only 1. Assume DB = 40 cm²/s, DE = 10 cm²/s, WE - 100 nm, WB - 50 nm, №₂ = 1017 cm³. Find Band a for: (a) N=2*1018 cm³, (b) N=5*1019 cm³, (c) N = 1020 cm³ and a SiGe base with 4EB = 80 meV, gB 2. Calculate ẞ and a for the transistor described above but with the base doping concentration gradually changing from 1018 to 10 17 cm³. 3. Calculate collector and base currents of the transistors described above.

Please answer Q2 and Q3 only 1. Assume DB = 40 cm²/s, DE = 10 cm²/s, WE - 100 nm, WB - 50 nm, №₂ = 1017 cm³. Find Band a for: (a) N=21018 cm³, (b) N=51019 cm³, (c) N = 1020 cm³ and a SiGe base with 4EB = 80 meV, gB 2. Calculate ẞ and a for the transistor described above but with the base doping concentration gradually changing from 1018 to 10 17 cm³. 3. Calculate collector and base currents of the transistors described above.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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