Concept explainers
(a)
The value of the voltage
(a)
Answer to Problem 16.8P
The maximum value of the voltage
Explanation of Solution
Calculation:
The given diagram is shown in Figure 1.
The expression for the voltage
Substitute
The expression for the enhancement mode NMOS inverter equation is given by,
Substitute
Conclusion:
Therefore, the maximum value of the voltage
(b)
The value of the voltage
(b)
Answer to Problem 16.8P
The maximum value of the voltage
Explanation of Solution
Calculation:
The expression for the voltage
Substitute
Consider the input voltage
The expression for the enhancement mode NMOS inverter equation is given by,
Substitute
Conclusion:
Therefore, the maximum value of the voltage
(c)
The value of the voltage
(c)
Answer to Problem 16.8P
The maximum value of the voltage
Explanation of Solution
Calculation:
The expression for the voltage
Substitute
Consider the input voltage
The expression for the enhancement mode NMOS inverter equation is given by,
Substitute
Conclusion:
Therefore, the maximum value of the voltage
(d)
The value of the voltage
(d)
Answer to Problem 16.8P
The maximum value of the voltage
Explanation of Solution
Calculation:
The expression for the voltage
Substitute
Consider the input voltage
The expression for the enhancement mode NMOS inverter equation is given by,
Substitute
Conclusion:
Therefore, the maximum value of the voltage
Want to see more full solutions like this?
Chapter 16 Solutions
Microelectronics: Circuit Analysis and Design
- Using the sine PWM method with the full bridge inverter below, it is desired to generate a voltage of 50 Hz on the serial RL load. A voltage of 120 V DC is applied to the input of the inverter circuit. Amplitude modulation rate ma -0.9 and frequency modulation rate mf -19. The resistance of the series RL load is 15 OHM and the coil inductance is 40 mH. a) What is the power drawn by the load resistor?b) What is the total harmonic distortion value (THD) of the load current?arrow_forwarda) A standard TTL inverter gate is shown in the figure. The supply voltage is 5V. Calculate the output voltage for both logic low and logic high input cases assuming input voltages respectively as 0.11V and 4.2V. Br= 130; BR = 0.24. You can make approximations when needed. Br = IcIs active region; BR = IE/ls inverse active region b) Assume you connect a resistor of 1.8K to the output of the circuit when the output is at logic high. What will be the change in the output voltage? 1302 R3 1.6k2 R, 4k2 Input o T, Output T, V, V. IkQ R,arrow_forwardFor an inverter with VIL = 0.46 V, VIH = 0.77 V, VOL= 0.08 V, and VOH = 1.2 V, find out the maximum value for the noise voltage in presence of which the inverter can work properly. Ans: 0.38 V.arrow_forward
- What is the power-delay product for a symmetrical CMOSinverter with (W/L)N = 2/1, (W/L)P = 5/1,VDD = 2.5 V, and C = 0.3 pF? (b) Repeat forVDD = 2.0 V. (c) Repeat for VDD = 1.8 V.? How much power does the inverter dissipate if it is switching at a frequency of 100 MHz?arrow_forwardProblem 3 Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.arrow_forwardAssume Vth = 1V and k = 50mA/V2. Given the schematic below, do the following: 1) Indicate and verify the state of each MOSFET and ?0 for the following input combinations. Fill-out the table below for each assumed state of the MOSFET for every input combination. Use ?ds,on approximation for linear operation. 2) Determine what kind of logic circuit is implemented in the circuit.arrow_forward
- You are asked to design an NMOS inverter with a resistive load, as shown in Figure 2.e, with the input voltage of either 0 V (logic level 0) or 3.3 V (logie level 1). The transistor is an n-channel enhancement type MOSFET with a threshold voltage of Vr = 1.5 V, an aspect ratio (WIL) of 20, and a gate capacitor per unit arca of 400 nF/em. The electron mobility is 500 cm/Vs. When the input is at logic level 1 (v, = 3.3 V), the transistor is in the linear region. Find the values of Voo and Rp to have the output voltage of 0.3 V at logic level 0 and 3.3 V at logic level +Vpo Rp O Va 1. Figure 2.e.arrow_forwardQuestion-3: Sketch the voltage transfer characteristic of the NMOS inverter circuit given in Figure 3 by calculating the output voltage Vour for Vin= 0, 2, 4, and 5 V. Find also noise margins. (K=1 mA/V2, V₁=1 V for the NMOS transistor.) Vin VDD=5V 5k Figure 3: NMOS inverter -Vout 21/2arrow_forward2. Half-bridge inverter is supplied by voltage 400V and is controlled by sinusoidal PWM with modulation index 0.8. What is the value of amplitude of the fundamental component of the AC output voltage? of 1arrow_forward
- Design an asymmetrical inverter to meet the delay specificationa symmetrical CMOS reference inverter to provide a delay of 1 ns when driving a 10-pF load.(a) Assume VDD =2.5 V. (b) Assume VDD =1.8 V and VT N =−VT P =0.45 V. with (W/L)P = 2(W/L)N .arrow_forwardWhat will be the fundamental frequency for the following circuit if each inverter delay is 100 nsec? Outputarrow_forwardIn the single-phase, full-bridge inverter controlled by the single PWM control, the frequency of the reference signal determines:arrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,